DC analysis of an MOS source follower
- 期刊名称IEEE Journal of Solid-State Circuits
- 作者Frohman-Bentchkowsky, D.; Vadasz, L.
- 卷第3卷
- 期第3期
- 印刷ISSN0018-9200
- 电子ISSN1558-173X
- 文件大小200.81KB
- 发表时间1968-09
- DOI10.1109/JSSC.1968.1049908
- 页码306-307
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