Resonant Raman effect in the indirect gap semiconductor gallium phosphide
- 作者J.F. Scott; T.C. Damen; R.C.C. Leite; W.T. Silfvast
- 卷第7卷
- 期第13期
- 印刷ISSN0038-1098
- 文件大小207.54KB
- 发表时间1969
- DOI10.1016/0038-1098(69)90550-x
- 页码953-955
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