![[ASCE TETRAHEDRALLY BONDED AMORPHOUS SEMICONDUCTORS - Yorktown Heights, New York (USA) (20–22 March 1974)] TETRAHEDRALLY BONDED AMORPHOUS SEMICONDUCTORS: International Conference - Pressure-Induced Semiconductor-Metal Transitions in Amorphous Si, Ge and]()
[ASCE TETRAHEDRALLY BONDED AMORPHOUS SEMICONDUCTORS - Yorktown Heights, New York (USA) (20–22 March 1974)] TETRAHEDRALLY BONDED AMORPHOUS SEMICONDUCTORS: International Conference - Pressure-Induced Semiconductor-Metal Transitions in Amorphous Si, Ge andMinomura, S.; Shimomura, O.; Saki, N.; Asaumi, K.; Endo, H.; Tamura, K.; Fukushima, J.; Tsuji, K. · 1974