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Determination of intervalley electron-phonon deformation potential constants in n -silicon by analysis of high electric field transport properties

Determination of intervalley electron-phonon deformation potential constants in n -silicon by analysis of high electric field transport properties

Nash, James G.
  • 期刊名称Applied Physics Letters
  • 作者Nash, James G.
  • 卷第25卷
  • 期第9期
  • 印刷ISSN0003-6951
  • 文件大小497.90KB
  • 发表时间1974
  • DOI10.1063/1.1655568
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