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Ion beam synthesis of heteroepitaxial erbium silicide layersM.F. Wu; A. Vantomme; H. Pattyn; G. Langouche; H. Bender · 1996
Elastic strain in InGaN and AlGaN layersM.F. Wu; Shude Yao; A. Vantomme; S. Hogg; G. Langouche; W. Van der Stricht; K. Jacobs; I. Moerman; J. Li; G.Y. Zhang · 2000
Strain and orientation in epitaxial CoSi2(111) layers formed by ion implantationM.F. Wu; A. Vantomme; G. Langouche; H. Vanderstraeten; Y. Bruynseraede · 1991
Formation of buried and surface CoSi2 layers by ion implantationM.F. Wu; A. Vantomme; H. Pattyn; G. Langouche; K. Maex; J. Vanhellemont; J. Vanacken; H. Vloeberghs; Y. Bruynseraede · 1990
Structural properties of thin silicide layers formed by high-dose metal implantationA. Vantomme; M.F. Wu; G. Langouche; H. Vanderstraeten; Y. Bruynseraede · 1991
Mössbauer study of metallic layers by ion implantation of Co in SiA. Vantomme; M.F. Wu; I. Dézsi; G. Langouche · 1989
Backscattering/channeling study of high-dose rare-earth implants into SiA. Vantomme; U. Wahl; M.F. Wu; S. Hogg; H. Pattyn; G. Langouche; H. Bender · 1998