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Determination of intervalley electron-phonon deformation-potential constants in n-silicon by analysis of high-electric-field transport properties

Determination of intervalley electron-phonon deformation-potential constants in n-silicon by analysis of high-electric-field transport properties

Nash, James; Holm-Kennedy, James
  • 作者Nash, James; Holm-Kennedy, James
  • 卷第15卷
  • 期第8期
  • 印刷ISSN1098-0121
  • 电子ISSN1550-235X
  • 文件大小822.27KB
  • 发表时间1977
  • DOI10.1103/physrevb.15.3994
  • 页码3994-4006
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