N-type doping of indium phosphide by implantation
- 作者D.Eirug Davies; J.P. Lorenzo; T.G. Ryan
- 卷第21卷
- 期第7期
- 印刷ISSN0038-1101
- 文件大小465.26KB
- 发表时间1978
- DOI10.1016/0038-1101(78)90298-8
- 页码981-985
同作者推荐
The Adiabatic Approximation in Transient Donor RecombinationW. Pickin · 1980
Transient luminescence in amorphous siliconW. Pickin; J.M. Marshall · 1991
-germanium, 4-9.5°KPickin, W. · Physical Review B · 1979
The kinetics of electron transitions for donors with excited statesW. Pickin · 1979
Impact ionization of shallow donor states in germanium, 4–7°KW. Pickin · 1978
The kinetics of electron transitions for donors with excited statesW. Pickin · 1978
Trap statistics and the gap density of states in amorphous materialsW. Pickin; S. Muhl · 1983