Effects of ion implantation on substrate hardening and film stress reduction and their effect on the yield of bipolar transistors

• 期刊名称Journal of Applied Physics
• 作者Hu, S. M.; Schwenker, R. O.
• 卷第49卷
• 期第6期
• 印刷ISSN0021-8979
• 文件大小1023.91KB
• 发表时间1978
• DOI10.1063/1.325274