Light-induced radiative recombination centers in hydrogenated amorphous siliconPankove, J. I.; Berkeyheiser, J. E. · Applied Physics Letters · 1980

Effect of high pressure on radiative recombination in hydrogenated amorphous siliconWeinstein, Bernard A. · Physical Review B · 1981

Spin-Dependent Radiative and Nonradiative Recombinations in Hydrogenated Amorphous Silicon: Optically Detected Magnetic ResonanceMorigaki, Kazuo · Journal of the Physical Society of Japan · 1981

Radiative and nonradiative recombination processes in hydrogenated amorphous silicon as elucidated by optically detected magnetic resonanceK. Morigaki; Y. Sano; I. Hirabayashi · 1981

Enhanced non-radiative recombination in hydrogenated amorphous silicon at low carrier densities and low temperaturesVollmar, Hans-Peter; Bindemann, Roland · Philosophical Magazine Letters · 1993

Study of Radiative Recombination Rate of Electron–hole Pairs in Hydrogenated Amorphous Silicon by Means of Frequency Resolved SpectroscopyOgihara, Chisato · Journal of the Physical Society of Japan · 2019

Passivation of GaAs surfaces*J. I. Pankove; J. E. Berkeyheiser; S. J. Kilpatrick; C. W. Magee · 1983

Laser annealing of hydrogenated amorphous siliconJ. I. Pankove; C. P. Wu; C. W. Magee; J. T. McGinn · 1980

Properties of Zn-doped GaN. I. PhotoluminescenceJ. I. Pankove; J. E. Berkeyheiser; E. A. Miller · 1974

The anomalous photovoltaic effectJ. I. Pankove · 1980

[Topics in Applied Physics] Electroluminescence Volume 17 ||Pankove, J. I. · 1977

Photoluminescence of ion-implanted GaNPankove, J. I. · Journal of Applied Physics · 1976

Absorption Edge of Impure Gallium ArsenidePankove, J. I. · Physical Review · 1965