On the gate-controlled surface capacitance of MOS structures of Si having n-channel inversion layers
- 作者D. R. Choudhury; A. K. Chowdhury; A. N. Chakravarti
- 卷第30卷
- 期第10期
- 印刷ISSN0011-4626
- 电子ISSN1572-9486
- 文件大小185.41KB
- 发表时间1980
- DOI10.1007/bf01604476
- 页码1157-1160
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