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Influence of surface electric field on the MOS capacitance of n-channel inversion layers in small gap semiconductors

Influence of surface electric field on the MOS capacitance of n-channel inversion layers in small gap semiconductors

D. R. Choudhury; A. K. Chowdhury; A. N. Chakravarti

作者D. R. Choudhury; A. K. Chowdhury; A. N. Chakravarti
卷第59卷
期第1期
印刷ISSN1862-6319
文件大小271.74KB
发表时间1980
DOI10.1002/pssa.2210590169

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