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On the modification of the Einstein relation for inversion layers on narrow gap semiconductors in a strong electric field

On the modification of the Einstein relation for inversion layers on narrow gap semiconductors in a strong electric field

A. N. Chakravarti; A. K. Chowdhury; K. P. Ghatak; D. R. Choudhury
  • 作者A. N. Chakravarti; A. K. Chowdhury; K. P. Ghatak; D. R. Choudhury
  • 卷第59卷
  • 期第2期
  • 印刷ISSN1862-6319
  • 文件大小217.88KB
  • 发表时间1980
  • DOI10.1002/pssa.2210590277
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