![[IEEE 2019 Device Research Conference (DRC) - Ann Arbor, MI, USA (2019.6.23-2019.6.26)] 2019 Device Research Conference (DRC) - Top-gated atomic precision phosphorous doped silicon single electron transistor with low thermal budget gate dielectric]()
[IEEE 2019 Device Research Conference (DRC) - Ann Arbor, MI, USA (2019.6.23-2019.6.26)] 2019 Device Research Conference (DRC) - Top-gated atomic precision phosphorous doped silicon single electron transistor with low thermal budget gate dielectricAnderson, E. M.; Maurer, L.; Tracy, L.; Smith, S. W.; Lu, P.; Katzenmeyer, A. M.; Baczewski, A.D.; Campbell, D. M.; Marshall, M. T.; Ward, D. R.; Lu, T.-M.; Misra, S. · 2019