Effect of growth temperature on the photoluminescent spectra from Sn-doped Ga1−xAlxAs grown by molecular beam epitaxy
- 期刊名称Applied Physics Letters
- 作者Swaminathan, V.
- 卷第38卷
- 期第5期
- 印刷ISSN0003-6951
- 文件大小489.90KB
- 发表时间1981
- DOI10.1063/1.92372
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