Electrical characterization of Al-SiO2-Si (N-type) tunnel structures, influence of LPCVD and LPO2 oxide growth technologies on the properties of the Si-SiO2 interface: G. Pananakakis, G. Kamarinos and M. El-sayed. Solid-St. Electron.26 (5), 415 (1983)

• 卷第24卷
• 期第1期
• 印刷ISSN0026-2714
• 文件大小122.94KB
• 发表时间1984
• DOI10.1016/0026-2714(84)90788-1