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The influence of the structure of amorphous silicon deposited in ultrahigh vacuum on the solid phase epitaxial growth rate

The influence of the structure of amorphous silicon deposited in ultrahigh vacuum on the solid phase epitaxial growth rate

I.G. Kaverina; V.V. Korobtsov; V.G. Lifshits; V.G. Zavodinskii; A.V. Zotov

作者I.G. Kaverina; V.V. Korobtsov; V.G. Lifshits; V.G. Zavodinskii; A.V. Zotov
卷第117卷
期第2期
印刷ISSN0040-6090
文件大小398.73KB
发表时间1984
DOI10.1016/0040-6090(84)90082-8
页码101-106

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