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Modeling of Sulfur Incorporation during Low Pressure CVD of GaAs (100) in the Ga-HCl-AsH[sub 3]-H[sub 2]-H[sub 2]S System

Modeling of Sulfur Incorporation during Low Pressure CVD of GaAs (100) in the Ga-HCl-AsH[sub 3]-H[sub 2]-H[sub 2]S System

Korec, J.

期刊名称Journal of The Electrochemical Society
作者Korec, J.
卷第131卷
期第6期
印刷ISSN0013-4651
文件大小615.21KB
发表时间1984
DOI10.1149/1.2115865

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