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Measurement of electron mobility in epitaxial heavily-phosphorus-doped silicon

Measurement of electron mobility in epitaxial heavily-phosphorus-doped silicon

J. A. Del Alamo; R. M. Swanson

作者J. A. Del Alamo; R. M. Swanson
文件大小486.37KB
发表时间1984
DOI10.1063/1.334258

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