InGaAs/InP heterobipolar transistors for integration on semi-insulating InP substrates
- 期刊名称Electronics Letters
- 作者Dämbkes, H.; König, U.; Schwaderer, B.
- 卷第20卷
- 期第23期
- 印刷ISSN0013-5194
- 文件大小1146.42KB
- 发表时间1984
- DOI10.1049/el:19840650
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