A structural and compositional analysis of interfaces in ZnSe0.94S0.06layers grown on to GaAs by OMCVD

• 作者B. Cockayne; P. J. Wright; G. W. Blackmore; J. O. Williams; T. L. Ng
• 卷第19卷
• 期第11期
• 印刷ISSN0022-2461
• 电子ISSN1573-4803
• 文件大小996.75KB
• 发表时间1984-11
• DOI10.1007/bf02396945
• 页码3726-3731