![SPIE Proceedings [SPIE Physical Concepts of Materials for Novel Optoelectronic Device Applications - Aachen, Federal Republic of Germany (Sunday 28 October 1990)] Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization - <title>Behavior of amorphous semiconductors As2S3 layers after photon, electron, or x-ray exposures</title>]()
SPIE Proceedings [SPIE Physical Concepts of Materials for Novel Optoelectronic Device Applications - Aachen, Federal Republic of Germany (Sunday 28 October 1990)] Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization - <title>Behavior of amorphous semiconductors As2S3 layers after photon, electron, or x-ray exposures</title>Guttmann, Peter; Danev, Gentsho V.; Spassova, Erintche M.; Babin, Sergey V.; Razeghi, Manijeh · 1991