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Photoluminescence and absorption linewidth of extremely flat GaAs-AlAs quantum wells prepared by molecular beam epitaxy including interrupted deposition for atomic layer smoothing

Photoluminescence and absorption linewidth of extremely flat GaAs-AlAs quantum wells prepared by molecular beam epitaxy including interrupted deposition for atomic layer smoothing

M. Tanaka; H. Sakaki; J. Yoshino; T. Furuta

作者M. Tanaka; H. Sakaki; J. Yoshino; T. Furuta
卷第174卷
印刷ISSN0167-2584
文件大小67.55KB
发表时间1986
DOI10.1016/0167-2584(86)90013-7

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