Depth Profiling of Si-SiO 2 Interface Structures
- 期刊名称Japanese Journal of Applied Physics
- 作者Suzuki, Toshihisa; Muto, Masaaki; Hara, Motohiro; Yamabe, Kikuo; Hattori, Takeo
- 卷第25卷
- 印刷ISSN0021-4922
- 电子ISSN1347-4065
- 文件大小1299.45KB
- 发表时间1986-4-20
- DOI10.1143/JJAP.25.544
- 页码544-551
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