Properties of AlxGa1−xAs (xAl≂0.3) grown by molecular-beam epitaxy on misoriented substrates
- 期刊名称Journal of Applied Physics
- 作者Tsui, R. K.; Curless, J. A.; Kramer, G. D.; Peffley, M. S.; Wicks, G. W.
- 卷第59卷
- 期第5期
- 印刷ISSN0021-8979
- 文件大小716.66KB
- 发表时间1986
- DOI10.1063/1.336456
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