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Recombination mechanisms in Si and Si thin films determined by picosecond reflectivity measurements near Brewster’s angle

Recombination mechanisms in Si and Si thin films determined by picosecond reflectivity measurements near Brewster’s angle

Fauchet, P. M.; Nighan, W. L.

期刊名称Applied Physics Letters
作者Fauchet, P. M.; Nighan, W. L.
卷第48卷
期第11期
印刷ISSN0003-6951
文件大小390.58KB
发表时间1986
DOI10.1063/1.96701

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