Amphoteric defects at the Si-SiO2 interface
- 期刊名称Applied Physics Letters
- 作者Chang, S. T.; Wu, J. K.; Lyon, S. A.
- 卷第48卷
- 期第10期
- 印刷ISSN0003-6951
- 文件大小432.01KB
- 发表时间1986
- DOI10.1063/1.96736
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