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Correlation Between Breakdown and Process-Induced Positive Charge Trapping in Thin Thermal SiO[sub 2]

Correlation Between Breakdown and Process-Induced Positive Charge Trapping in Thin Thermal SiO[sub 2]

Holland, S.
  • 期刊名称Journal of The Electrochemical Society
  • 作者Holland, S.
  • 卷第133卷
  • 期第8期
  • 印刷ISSN0013-4651
  • 文件大小1118.58KB
  • 发表时间1986
  • DOI10.1149/1.2108999
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