发现好书期刊,享受阅读乐趣

海量图书期刊资源,随时随地畅享阅读乐趣

Mixing of phosphorus and antimony ions in silicon by recoil implantation

Mixing of phosphorus and antimony ions in silicon by recoil implantation

H. L. Kwok; Y. W. Lam; S. P. Wong; M. C. Poon
  • 作者H. L. Kwok; Y. W. Lam; S. P. Wong; M. C. Poon
  • 卷第5卷
  • 期第6期
  • 印刷ISSN0261-8028
  • 电子ISSN1573-4811
  • 文件大小176.38KB
  • 发表时间1986-06
  • DOI10.1007/bf01731532
  • 页码633-634
← 返回【学霸图书馆】主页