Effects of ion-implantation damage on two-dimensional boron diffusion in silicon
- 期刊名称Journal of Applied Physics
- 作者Marchiando, J. F.; Albers, John
- 卷第61卷
- 期第4期
- 印刷ISSN0021-8979
- 文件大小1375.51KB
- 发表时间1987
- DOI10.1063/1.338117
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