The electrical properties of doped silicon, grown by Molecular-Beam-Epitaxy (MBE)
- 作者R. A. A. Kubiak; S. M. Newstead; W. Y. Leong; R. Houghton; E. H. C. Parker; T. E. Whall
- 卷第42卷
- 期第3期
- 印刷ISSN0947-8396
- 电子ISSN1432-0630
- 文件大小334.80KB
- 发表时间1987-03
- DOI10.1007/bf00620599
- 页码197-200
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