Studies of molecular-beam epitaxy growth of GaAs on porous Si substrates
- 期刊名称Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- 作者Mii, Y. J.
- 卷第6卷
- 期第2期
- 印刷ISSN0734-211X
- 文件大小660.73KB
- 发表时间1988-3
- DOI10.1116/1.584395
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