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[IEEE Technical Digest., International Electron Devices Meeting - San Francisco, CA, USA (11-14 Dec. 1988)] Technical Digest., International Electron Devices Meeting - Novel self-aligned gate process technology for i-AlGaAs/n-GaAs doped-channel hetero-MISFET(DMT) LSIs based on E/D logic gates

[IEEE Technical Digest., International Electron Devices Meeting - San Francisco, CA, USA (11-14 Dec. 1988)] Technical Digest., International Electron Devices Meeting - Novel self-aligned gate process technology for i-AlGaAs/n-GaAs doped-channel hetero-MISFET(DMT) LSIs based on E/D logic gates

Hida, H.; Tsukada, Y.; Ogawa, Y.; Toyoshima, H.; Fujii, M.; Shibahara, K.; Kohno, M.; Nozaki, T.
  • 作者Hida, H.; Tsukada, Y.; Ogawa, Y.; Toyoshima, H.; Fujii, M.; Shibahara, K.; Kohno, M.; Nozaki, T.
  • 文件大小276.97KB
  • 发表时间1988
  • DOI10.1109/iedm.1988.32906
  • 页码688-691
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