Chloride vapor phase epitaxial growth of high-purity GaInPHoshino, Masataka; Kodama, Kunihiko; Kitahara, Kuninori; Ozeki, Masashi · Applied Physics Letters · 1986

Selective growth of InP buried structure by chloride vapor phase epitaxyHoshino, Masataka; Tanaka, Kazuhiro; Komeno, Junji; Kitahara, Kuninori; Kodama, Kunihiko; Ozeki, Masashi · Applied Physics Letters · 1986

Chloride vapor phase epitaxial growth of a Ga0.52In0.48P/GaAs heterostructure with an abrupt heterointerfaceHoshino, Masataka; Kodama, Kunihiko; Kitahara, Kuninori; Komeno, Junji; Ozeki, Masashi · Applied Physics Letters · 1986

Shallow and Deep Donor Levels in S-Doped Ga <sub/>0.52</sub> In <sub/>0.48</sub> P Grown by Chloride VPEKitahara, Kuninori; Hoshino, Masataka; Kodama, Kunihiko; Ozeki, Masashi · Japanese Journal of Applied Physics · 1986

Donor-Related Deep Level in S-Doped Ga <sub/>0.52</sub> In <sub/>0.48</sub> P Grwon by Chloride VPEKitahara, Kuninori; Hoshino, Masataka; Kodama, Kunihiko; Ozeki, Masashi · Japanese Journal of Applied Physics · 1986

Two-Dimensional-Electron Gas in Undoped and Selectively-Doped GaInP/GaAs Heterostructures Grown by Chloride-Vapor-Phase EpitaxyKitahara, Kuninori; Hoshino, Masataka; Kodama, Kunihiko; Ozeki, Masashi · Japanese Journal of Applied Physics · 1987

Near-Band-Edge Photoluminescenee of High-Purity Ga <sub/><i>x</i> </sub> In <sub/> 1- <i>x</i> </sub> P Grown by Chloride Vapor-Phase EpitaxyKodama, Kunihiko; Hoshino, Masataka; Kitahara, Kuninori; Ozeki, Masashi · Japanese Journal of Applied Physics · 1986