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Reduction of dislocation density of MBE-grown Si1−xGex layers on (100) Si by rapid thermal annealing

Reduction of dislocation density of MBE-grown Si1−xGex layers on (100) Si by rapid thermal annealing

B. Holländer; S. Mantl; W. Jäger; F. Schäffler; E. Kasper
  • 作者B. Holländer; S. Mantl; W. Jäger; F. Schäffler; E. Kasper
  • 卷第183卷
  • 印刷ISSN0040-6090
  • 文件大小451.81KB
  • 发表时间1989
  • DOI10.1016/0040-6090(89)90440-9
  • 页码157-164
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