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Characterization of AlxGa1−xAs/GaAs Heterostructures by Electroreflectance Depth ProfilingR. Goldhahn; H. Röppischer; M. Gericke; C.-E. Richter · 1990
Electroreflectance Depth Profiling and Hall Measurements of Thermally Converted GaAs LayersH. Röppischer; R. Goldhahn; J. A. Bumai; D. S. Domanevskii · 1987