An accurate calculation of the d.c. electrical and thermal characteristics of GaAs transferred-electron devices
- 作者A.R. Batchelor; R.E. Miles; M.J. Howes
- 卷第33卷
- 期第11期
- 印刷ISSN0038-1101
- 文件大小597.11KB
- 发表时间1990
- DOI10.1016/0038-1101(90)90125-x
- 页码1485-1491
Kink effect on the base current of heterojunction bipolar transistorsJ.J. Liou; L.L. Liou; C.I. Huang · 1993
The thermal-avalanche interacting behavior of AlGaAs/GaAs HBTsJ.J. Liou; L.L. Liou; C.I. Huang · 1994
Modeling the avalanche multiplication current of AlGaAs/GaAs heterojunction bipolar transistorsJ.J. Liou; L.L. Liou; C.I. Huang; B. Bayraktaroglu · 1993
A semi-numerical model for multi-emitter finger AlGaAs/GaAs HBTsA. Kager; J.J. Liou; L.L. Liou; C. Huang · 1994
An analytical model for current transport in AlGaAs/GaAs abrupt HBTs with a setback layerJ.J. Liou; C.-S. Ho; L.L. Liou; C.I. Huang · 1993
Combined effects of graded and setback layers on the AlGaAsGaAs HBT current-voltage characteristicsC.S. Ho; J.J. Liou; D.L. Chen; L.L. Liou; C.I. Huang · 1995
Electrostatic discharge in semiconductor devices: an overviewVinson, J.E.; Liou, J.J. · 1998
Electrostatic discharge in semiconductor devices: protection techniquesVinson, J.E.; Liou, J.J. · 2000