Fracture-like nature of defects in the time-dependent dielectric breakdown of metal-oxide-semiconductor capacitors
- 作者R.K. Bhan; S.K. Lomash; P.C. Mathur
- 卷第189卷
- 期第1期
- 印刷ISSN0040-6090
- 文件大小248.69KB
- 发表时间1990
- DOI10.1016/0040-6090(90)90024-8
- 页码39-43
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