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[IEEE International Technical Digest on Electron Devices - San Francisco, CA, USA (9-12 Dec. 1990)] International Technical Digest on Electron Devices - Rugged surface poly-Si electrode and low temperature deposited Si/sub 3/N/sub 4/ for 64 Mbit and beyond STC DRAM cell

[IEEE International Technical Digest on Electron Devices - San Francisco, CA, USA (9-12 Dec. 1990)] International Technical Digest on Electron Devices - Rugged surface poly-Si electrode and low temperature deposited Si/sub 3/N/sub 4/ for 64 Mbit and beyond STC DRAM cell

Yoshimaru, M.; Miyano, J.; Inoue, N.; Sakamoto, A.; You, S.; Tamura, H.; Ino, M.
  • 作者Yoshimaru, M.; Miyano, J.; Inoue, N.; Sakamoto, A.; You, S.; Tamura, H.; Ino, M.
  • 文件大小509.16KB
  • 发表时间1990
  • DOI10.1109/iedm.1990.237113
  • 页码659-662
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