[IEEE 12th Annual Symposium on Gallium Arsenide Integrated Circuit (GaAs IC) - New Orleans, LA, USA (7-10 Oct. 1990)] 12th Annual Symposium on Gallium Arsenide Integrated Circuit (GaAs IC) - A low power 16 K GaAs HMESFET static RAM with built-in redundancy
Tsen, T.; Kwiat, J.; Walton, E.; Elliott, K.; Tiku, S.; Cappon, A.
- 作者Tsen, T.; Kwiat, J.; Walton, E.; Elliott, K.; Tiku, S.; Cappon, A.
- 文件大小175.04KB
- 发表时间1990
- DOI10.1109/gaas.1990.175474
- 页码155-157