Formation of buried SiO2 layer by oxygen implanted into Si/Ge and Si/Si0.5Ge0.5 substrates

Tang, Y. S.; Zhang, Jingping; Hemment, P. L. F.; Sealy, B. J.; Liu, Hengda; Castle, J. E.; Newstead, S. M.; Powell, A. R.; Whall, T. E.; Parker, E. H. C.

期刊名称Journal of Applied Physics
作者Tang, Y. S.; Zhang, Jingping; Hemment, P. L. F.; Sealy, B. J.; Liu, Hengda; Castle, J. E.; Newstead, S. M.; Powell, A. R.; Whall, T. E.; Parker, E. H. C.
卷第67卷
期第11期
印刷ISSN0021-8979
文件大小553.42KB
发表时间1990
DOI10.1063/1.344542

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Formation of buried SiO2 layer by oxygen implanted into Si/Ge and Si/Si0.5Ge0.5 substrates