InAs/InP strained single quantum wells grown by atmospheric pressure organometallic vapor phase epitaxy
- 期刊名称Applied Physics Letters
- 作者Schneider, R. P.; Wessels, B. W.
- 卷第57卷
- 期第19期
- 印刷ISSN0003-6951
- 文件大小584.25KB
- 发表时间1990
- DOI10.1063/1.103989
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