Atomic level control in gas source MBE growth of cubic SiC

• 期刊名称Journal of Crystal Growth
• 作者Yoshinobu, Tatsuo; Nakayama, Michiaki; Shiomi, Hiromu; Fuyuki, Takashi; Matsunami, Hiroyuki
• 卷第99卷
• 印刷ISSN0022-0248
• 文件大小319.03KB
• 发表时间1990-1
• DOI10.1016/0022-0248(90)90575-6
• 页码520-524