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Strain relaxation in Ge0.09Si0.91epitaxial thin films measured by wafer curvature

Strain relaxation in Ge0.09Si0.91epitaxial thin films measured by wafer curvature

C. A. Volkert; E. A. Fitzgerald; R. Hull; Y. H. Xie; Y. J. Mii

作者C. A. Volkert; E. A. Fitzgerald; R. Hull; Y. H. Xie; Y. J. Mii
卷第20卷
期第7期
印刷ISSN0361-5235
电子ISSN1543-186X
文件大小813.12KB
发表时间1991-07
DOI10.1007/bf02665972
页码833-837

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