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The nature of structural defects and thermal equilibrium effects on doped a-Si:H as elucidated by electron nuclear double resonance measurements

The nature of structural defects and thermal equilibrium effects on doped a-Si:H as elucidated by electron nuclear double resonance measurements

H. Yokomichi; K. Morigaki
  • 作者H. Yokomichi; K. Morigaki
  • 印刷ISSN0022-3093
  • 文件大小268.30KB
  • 发表时间1991
  • DOI10.1016/s0022-3093(05)80086-9
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