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Monte Carlo Device Simulation || Theory and Calculation of the Deformation Potential Electron-Phonon Scattering Rates in Semiconductors

Monte Carlo Device Simulation || Theory and Calculation of the Deformation Potential Electron-Phonon Scattering Rates in Semiconductors

Hess, Karl
  • 作者Hess, Karl
  • 文件大小3045.32KB
  • 发表时间1991
  • DOI10.1007/978-1-4615-4026-7_5
  • 页码123-160
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