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Theory of homoepitaxy on Si(001) : I. Kinetics during growth

Theory of homoepitaxy on Si(001) : I. Kinetics during growth

S. Clarke; M.R. Wilby; D.D. Vvedensky

作者S. Clarke; M.R. Wilby; D.D. Vvedensky
卷第255卷
印刷ISSN0167-2584
文件大小88.72KB
发表时间1991
DOI10.1016/0167-2584(91)90169-r

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