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Totally relaxed GexSi1−x layers with low threading dislocation densities grown on Si substrates

Totally relaxed GexSi1−x layers with low threading dislocation densities grown on Si substrates

E. A. Fitzgerald; Y. Xie; M. L. Green; D. Brasen; A. R. Kortan; J. Michel; Y. Mii; B. E. Weir
  • 作者E. A. Fitzgerald; Y. Xie; M. L. Green; D. Brasen; A. R. Kortan; J. Michel; Y. Mii; B. E. Weir
  • 文件大小722.65KB
  • 发表时间1991
  • DOI10.1063/1.105351
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