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Temperature influence on the damage induced in Si+-implanted InP

Temperature influence on the damage induced in Si+-implanted InP

P. Zheng; M. Ruault; M. Gasgnier; B. Descouts; P. Krauz
  • 作者P. Zheng; M. Ruault; M. Gasgnier; B. Descouts; P. Krauz
  • 文件大小1134.85KB
  • 发表时间1991
  • DOI10.1063/1.349631
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