Optical properties of InAs/InP strained single quantum wells grown by organometallic vapor-phase epitaxy

• 期刊名称Journal of Applied Physics
• 作者Schneider, R. P.; Wessels, B. W.
• 卷第70卷
• 期第1期
• 印刷ISSN0021-8979
• 文件大小708.87KB
• 发表时间1991
• DOI10.1063/1.350289