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The Effects of AsH
              <sub/>3</sub>
              Preflow Conditions at Low Temperature on the Morphology of GaAs Buffer Layers for GaAs/Si Grown by Metalorganic Chemical Vapor Deposition

The Effects of AsH 3 Preflow Conditions at Low Temperature on the Morphology of GaAs Buffer Layers for GaAs/Si Grown by Metalorganic Chemical Vapor Deposition

Asai, Koyu; Fujita, Kazuhisa; Shiba, Yasunari
  • 期刊名称Japanese Journal of Applied Physics
  • 作者Asai, Koyu; Fujita, Kazuhisa; Shiba, Yasunari
  • 卷第30卷
  • 印刷ISSN0021-4922
  • 文件大小1639.42KB
  • 发表时间1991-11-15
  • DOI10.1143/jjap.30.l1967
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